Wafer
Membrane Wafer
Use
Wafer coated with a layer of film such as thermal oxide films (SiO2), nitride films (LP-SiN), TEOS films, metal films (W, Ti / TiN, Al, Cu), resists, and polysilicon films.
Features
Oxide Film Wafer
| 200mm | 300m | |
| Oxidation film thickness | 500 ± 25nm | 500 ± 25nm |
| Uniformity | <3% | <3% |
| Wafer to Wafer Uniformity | <3% | <3% |
| SPEC | 0.2 μm ≤ 30ea | 0.20um ≤ 30ea |
| Diameter (mm) | 200 ± 0.2 mm | 300 ± 0.2 mm |
| Type | P | P |
| Crystal orientation | <100> ± 1 | <100> ± 1 |
| Notch orientation | <110> ± 1 | <110> ± 1 |
| Resistance value (Ω ・ cm) | 1-100 | 1-100 |
| Thickness (μm) | 725 ± 25 | 775 ± 25 |
| TTV (μm) | ≤25 | ≤10 |
| BOW (μm) | ≤40 | ≤40 |
| WARP (μm) | ≤40 | ≤40 |
| Surface impurities | ≤ 5.0E 10 atom / cm2 | <1 E10 Atoms / cm2 |
Please contact us for other films.